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| process CPD30V dual switching diode dual, common cathode, high speed switching diode chip geometry process details principal device type cmld2838 gross die per 4 inch wafer 46,200 die size 15.4 x 15.4 mils die thickness 7.1 mils anode 1 bonding pad area 5.9 x 5.9 x 8.3 mils anode 2 bonding pad area 5.9 x 5.9 x 8.3 mils top side metalization al - 30,000? back side metalization au-as - 10,000? backside common cathode r0 www.centralsemi.com r2 (6-october 2011)
process CPD30V typical electrical characteristics www.centralsemi.com r2 (6-october 2011) |
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